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| ISTS149, ISTS703A, ISTS708 REFLECTIVE OPTICAL SWITCHES DESCRIPTION The ISTS149, ISTS703A, ISTS708 each consist 5.1 of an infrared emitting diode and a NPN silicon photo transistor mounted side by side on point of converging axes in a polycarbonate housing. The optimum response package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability.The phototransistor responds to radiation from the emitter only when 3.3 3.0 a reflective object passes within its field of view FEATURES l Phototransistor output l Opaque housing provides improved visible light rejection l Three available package types l Adjustable side-mounting provision l Also available with flying leads, with or without connector, supplied as required APPLICATIONS l Copiers, Printers, Facsimilies, Record Players, Casette Decks, Optoelectronic Switches, VCR's, 4.1 3.5 ISTS708 9.7 1 Dimensions in mm 2 3 17.8 3.18 nom. 15.5 15.0 4 5.1 12.3 9.5 0.5 sq. 2.54 ISTS149 5.1 1 2 3 17.8 4 point of optimum response 3.18 nom. 2.3 2.54 4.6 8.9 0.5 sq. 2.54 4 3 2 17.0 1 3.8 ISTS703A 5.1 9.15 1 4 point of optimum response 8.0 4.45 nom. 1.70 1.45 5.5 15.0 2 3 2.54 3.3 3.0 0.5 sq. 22.8 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 24/9/97 ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549 DB92074-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -40C to + 85C Operating Temperature -25C to + 85C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 50mW 60mA 3V 90mW ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) ( Note 1 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) MIN TYP MAX UNITS 1.6 3 100 30 5 100 V V A V V nA TEST CONDITION IF = 40mA IR = 100A VR = 3V IC = 1mA IE = 100A VCE = 15V Output Coupled On-State Collector Current I C ( ON ) ( Note 1 ) ISTS149 ISTS703A ISTS708 25 200 10 A A A 40mA IF , 5V VCE D(mm) = 3.8mm 40mA IF , 5V VCE D(mm) = 3.8mm 40mA IF , 5V VCE D(mm) = 3.8mm Collector-emitter Saturation VoltageVCE(SAT) ISTS149 ISTS703A ISTS708 0.4 0.4 0.4 V V V 40mA IF , 3A IC D(mm) = 3.8mm 40mA IF , 100A IC D(mm) = 3.8mm 40mA IF , 3A IC D(mm) = 3.8mm Note 1 Special Selections are available on request. Please consult the factory. 24/9/97 DB92074-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 60 Collector power dissipation PC (mW) 50 40 30 20 10 0 -25 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 80 70 60 50 40 30 20 10 0 -25 0 25 50 75 100 Ambient temperature TA ( C ) Normalized Output Current vs. Ambient Temperature 1.5 Normalized output current 125 Normalized output current Forward current IF (mA) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 0.1 Normalized Output Current vs. Collector-emitter Voltage Normalized output current IF = 60mA 40mA 20mA 10mA Normalized to IF = 40mA VCE = 5V Pulsed PW = 100s PRR = 100pps 10 100 TA = 25C 1 Collector-emitter voltage VCE ( V ) Normalized Output Current vs. Forward Current Normalized to IF = 40mA VCE = 0.4V Pulsed PW = 100s PRR = 100pps TA = 25C 2 5 10 20 50 Forward current IF (mA) Collector-emitter saturation voltage VCE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -25 0 25 50 75 100 Ambient temperature TA ( C ) DB92074-AAS/A1 IF = 40mA VCE = 5V IF = 40mA IC = 100A 1.0 0.5 0 -25 0 25 50 75 100 Ambient temperature TA ( C ) 24/9/97 |
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